[ M2G9JAJAMK9F081AAD ]

    Memory Module Properties:
      Module Name                                       M2G9JAJAMK9F081AAD
      Serial Number                                     None
      Manufacture Date                                  Week 8 / 2004
      Module Size                                       512 MB (2 rows, 4 banks)
      Module Type                                       Unbuffered
      Memory Type                                       DDR SDRAM
      Memory Speed                                      PC3200 (200 MHz)
      Module Width                                      64 bit
      Module Voltage                                    SSTL 2.5
      Error Detection Method                            None
      Refresh Rate                                      Reduced (7.8 us), Self-Refresh
      Highest CAS Latency                               2.5 (5.0 ns @ 200 MHz)

    Memory Module Features:
      Early RAS# Precharge                              Not Supported
      Auto-Precharge                                    Not Supported
      Precharge All                                     Not Supported
      Write1/Read Burst                                 Not Supported
      Buffered Address/Control Inputs                   Not Supported
      Registered Address/Control Inputs                 Not Supported
      On-Card PLL (Clock)                               Not Supported
      Buffered DQMB Inputs                              Not Supported
      Registered DQMB Inputs                            Not Supported
      Differential Clock Input                          Supported
      Redundant Row Address                             Not Supported

  [ Samsung M3 68L6423DTL-CB0 ]

    Memory Module Properties:
      Module Name                                       Samsung M3 68L6423DTL-CB0
      Serial Number                                     354F520Eh
      Manufacture Date                                  Week 50 / 2002
      Module Size                                       512 MB (2 rows, 4 banks)
      Module Type                                       Unbuffered
      Memory Type                                       DDR SDRAM
      Memory Speed                                      PC2100 (133 MHz)
      Module Width                                      64 bit
      Module Voltage                                    SSTL 2.5
      Error Detection Method                            None
      Refresh Rate                                      Reduced (7.8 us), Self-Refresh
      Highest CAS Latency                               2.5 (7.5 ns @ 133 MHz)
      2nd Highest CAS Latency                           2.0 (10.0 ns @ 100 MHz)

    Memory Module Features:
      Early RAS# Precharge                              Not Supported
      Auto-Precharge                                    Not Supported
      Precharge All                                     Not Supported
      Write1/Read Burst                                 Not Supported
      Buffered Address/Control Inputs                   Not Supported
      Registered Address/Control Inputs                 Not Supported
      On-Card PLL (Clock)                               Not Supported
      Buffered DQMB Inputs                              Not Supported
      Registered DQMB Inputs                            Not Supported
      Differential Clock Input                          Supported
      Redundant Row Address                             Not Supported

    Memory Module Manufacturer:
      Company Name                                      Samsung
      Product Information                               http://www.samsung.com/Products/Semiconductor/DRAM/index.htm